2N6032
HIGH POWER NPN TRANSISTOR
Transistors Bipolar Bjt Single
TO-204AE
Active
$19.80 / unit (market reference)
MOQ: 16 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | 2N6032 |
| Package / Case | TO-204AE |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Power Dissipation (Max) | 140 W |
| Supplier Device Package | TO-204AE |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
2N6032 by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-204AE package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for 2N6032
Alternatives & Replacements
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All Technical Specifications
| Power - Max | 140 W |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1.3V @ 5A, 50A |
| Current - Collector (Ic) (Max) | 50 A |
| Current - Collector Cutoff (Max) | 10mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 50A, 2.6V |
| Voltage - Collector Emitter Breakdown (Max) | 90 V |
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