onsemiTO-226-3, TO-92-3 Long Body (Formed Leads)RoHS
2N5551RL1G
TRANS NPN 160V 0.6A TO-92
Category
Subcategory
Transistors Bipolar Bjt Single
Package
TO-226-3, TO-92-3 Long Body (Formed Leads)
Status
Obsolete
Datasheet
$0.07 / unit (market reference)
MOQ: 4121 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
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Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | 2N5551RL1G |
| Package / Case | TO-226-3, TO-92-3 Long Body (Formed Leads) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 625 mW |
| Supplier Device Package | TO-92 (TO-226) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
2N5551RL1G by onsemi is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-226-3, TO-92-3 Long Body (Formed Leads) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for 2N5551RL1G
Alternatives & Replacements
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onsemiStockTO-226-3, TO-92-3 Long Body (Formed Leads)
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onsemiStockTO-226-3, TO-92-3 Long Body (Formed Leads)
BC337-40ZL1G
TRANS NPN 45V 0.8A TO-92
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onsemiStockTO-226-3, TO-92-3 Long Body (Formed Leads)
2SC536NF-NPA-AT
TRANS NPN 50V 0.15A NPA
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All Technical Specifications
| Power - Max | 625 mW |
| Transistor Type | NPN |
| Frequency - Transition | 300MHz |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
| Current - Collector (Ic) (Max) | 600 mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
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