NTE Electronics, IncTO-226-3, TO-92-3 Long BodyRoHS
2N5401
TRANS PNP 150V 600MA TO92-3
Category
Subcategory
Transistors Bipolar Bjt Single
Package
TO-226-3, TO-92-3 Long Body
Status
Active
$0.11 / unit (market reference)
MOQ: 25 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | NTE Electronics, Inc |
| Model | 2N5401 |
| Package / Case | TO-226-3, TO-92-3 Long Body |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 625 mW |
| Supplier Device Package | TO-92 (TO-226) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
2N5401 by NTE Electronics, Inc is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-226-3, TO-92-3 Long Body package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| Power - Max | 625 mW |
| Transistor Type | PNP |
| Frequency - Transition | 300MHz |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Current - Collector (Ic) (Max) | 600 mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
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