SMALL SIGNAL BIPOLAR TRANSISTOR

Transistors Bipolar Bjt Arrays
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Active
$0.02 / unit (market reference)
MOQ: 15000 pcs
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| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | 2N4401RP |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 625mW |
| Supplier Device Package | TO-92 (TO-226) |
| RoHS | RoHS |
| Part Status | Active |
2N4401RP by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-226-3, TO-92-3 (TO-226AA) Formed Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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| Power - Max | 625mW |
| Transistor Type | NPN |
| Frequency - Transition | 250MHz |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 50mA, 500mA |
| Current - Collector (Ic) (Max) | 600mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 1V |
| Voltage - Collector Emitter Breakdown (Max) | 40V |
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