T-NPN SI- AF PREAMP DR

Transistors Bipolar Bjt Single
TO-205AD, TO-39-3 Metal Can
Active
$0.88 / unit (market reference)
MOQ: 5 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
| Parameter | Value |
|---|---|
| Brand | NTE Electronics, Inc |
| Model | 2N3019 |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Power Dissipation (Max) | 800 mW |
| Supplier Device Package | TO-39 |
| RoHS | RoHS |
| Part Status | Active |
2N3019 by NTE Electronics, Inc is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-205AD, TO-39-3 Metal Can package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
SMALL SIGNAL BIPOLAR TRANSISTOR
TRANS PNP 80V 1A TO-39
TRANS NPN 250V TO-39
TRANS NPN 130V 1A TO39
TRANS PNP 60V 0.6A TO-39
TRANS PNP 200V 1A TO39
| Power - Max | 800 mW |
| Transistor Type | NPN |
| Frequency - Transition | 100MHz |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector (Ic) (Max) | 1 A |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
Submit your quantity and details — we will reply within 24 hours.