Microchip TechnologySQ-MELF, BRoHS
1N5553US
DIODE GEN PURP 800V 3A B-MELF
Category
Subcategory
Diodes Rectifiers Single
Package
SQ-MELF, B
Status
Active
Datasheet
$9.78 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
✅ 365-Day Warranty🚚 Global Shipping
Parameters
| Parameter | Value |
|---|---|
| Brand | Microchip Technology |
| Model | 1N5553US |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Supplier Device Package | B, SQ-MELF |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
1N5553US by Microchip Technology is a commonly used electronic component in the Diodes Rectifiers Single category. Available in SQ-MELF, B package with standard temperature range operating temperature range. Contact us for datasheet, pricing, and availability.
📖 Technical Guides for 1N5553US
Alternatives & Replacements
View All →Microchip TechnologyStockSQ-MELF, B
1N5809US
DIODE GEN PURP 100V 3A B-MELF
Request QuoteRFQ →
Microchip TechnologyStockSQ-MELF, B
1N6643US
DIODE GEN PURP 50V 300MA D5B
Request QuoteRFQ →
WECStockSQ-MELF, B
JAN1N5553US
DIODE GEN PURP 800V 3A B-MELF
Request QuoteRFQ →
Microchip TechnologyStockSQ-MELF, B
JANS1N3595US
DIODE GEN PURP 200MA DO35
Request QuoteRFQ →
WECStockSQ-MELF, B
1N5552US
DIODE GEN PURP 600V 3A D5B
Request QuoteRFQ →
Microchip TechnologyStockSQ-MELF, B
1N5822US
DIODE SCHOTTKY 40V 3A B-MELF
Request QuoteRFQ →
All Technical Specifications
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Diode Type | Standard |
| Reverse Recovery Time (trr) | 2 µs |
| Current - Reverse Leakage @ Vr | 1 µA @ 800 V |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Current - Average Rectified (Io) | 3A |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 9 A |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.