Vishay General Semiconductor - Diodes Division16-MTP ModuleRoHS
19MT050XF
MOSFET 4N-CH 500V 31A MTP
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
16-MTP Module
Series
HEXFET®
Status
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay General Semiconductor - Diodes Division |
| Model | 19MT050XF |
| Package / Case | 16-MTP Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Type | 4 N-Channel (H-Bridge) |
| Drain to Source Voltage (Vdss) | 500V |
| Rds On (Max) | 220mOhm @ 19A, 10V |
| Vgs(th) (Max) | 6V @ 250µA |
| Gate Charge (Qg) | 160nC @ 10V |
| Input Capacitance (Ciss) | 7210pF @ 25V |
| Power Dissipation (Max) | 1140W |
| Supplier Device Package | 16-MTP |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
19MT050XF by Vishay General Semiconductor - Diodes Division is an N-channel power MOSFET rated at 500V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 16-MTP Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 220mOhm @ 19A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | 4 N-Channel (H-Bridge) |
| FET Feature | Standard |
| Power - Max | 1140W |
| Vgs(th) (Max) @ Id | 6V @ 250µA |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 19A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 160nC @ 10V |
| Drain to Source Voltage (Vdss) | 500V |
| Input Capacitance (Ciss) (Max) @ Vds | 7210pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 31A |
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