Characterizing Charge Components In TMD-based MOS Structures (imec, KU Leuven, ASM)

Researchers at imec, KU Leuven, and ASM published a technical paper titled “Dissecting the transition metal dichalcogenides-based metal-oxide-semiconductor structures charge components.”

Abstract Excerpt: “Different variable charges such as interface traps, oxide border traps, and mobile carriers can contribute to the total capacitance in metal oxide semiconductor (MOS) field-effect devices. This study aims to quantify these charge components using multi-frequency, multi-temperature capacitance–voltage/conductance–voltage (C–V/G–V) scans with interface trap density profile mapping combined with Hall measurements on fully depleted few-layer transition metal dichalcogenides (MX₂)-based MOS devices.”

Find the technical paper here. September 2026.

Introna, M., K. Mootheri, V., Wu, X. et al. Dissecting the transition metal dichalcogenides-based metal-oxide-semiconductor structures charge components. npj 2D Mater Appl (2026). https://doi.org/10.1038/s41699-026-00736-8  

 

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