Infineon Launches Rad-Hard GaN Driver for Space Power Systems

Infineon Technologies has expanded its portfolio of radiation-hardened power management devices with the RIC70115, a gate driver developed for gallium nitride (GaN) and silicon power transistors used in satellite and other high-reliability space systems. Designed to support both low-side and high-side switching configurations, the device enables the adoption of GaN-based power conversion architectures while meeting the stringent reliability and radiation requirements of modern space missions.

The growing deployment of satellite constellations and other New Space platforms is driving demand for power electronics that deliver higher efficiency, reduced weight, and increased power density. Wide-bandgap semiconductors such as GaN are increasingly adopted for their faster switching speeds and lower switching losses compared with conventional silicon devices. The RIC70115 is designed to simplify the integration of these technologies by providing a radiation-hardened gate driver compatible with both GaN HEMTs and silicon MOSFETs.

To improve switching reliability, the driver incorporates an independent Miller clamp that suppresses unintended transistor turn-on caused by parasitic capacitances during high-speed switching. This function helps minimize switching losses while maintaining stable operation. The device also features a Truly Differential Input (TDI) architecture that improves immunity to common-mode noise, electromagnetic interference (EMI), and radio-frequency interference (RFI), conditions frequently encountered in satellite power distribution systems.

An integrated low-dropout (LDO) regulator generates a regulated 4.8 V gate-drive supply from input voltages ranging from 4.75 V to 15 V, eliminating the need for additional external regulation circuitry. By integrating multiple functions into a single device, the RIC70115 reduces component count, simplifies board design, and contributes to higher overall system reliability in long-duration space missions.

The driver is qualified to the MIL-PRF-38535 specification and supports an operating temperature range from -55°C to 125°C. It is radiation hardened to withstand a total ionizing dose (TID) of up to 100 krad (Si) and has been characterized for single-event effects (SEE) up to a linear energy transfer (LET) of 81.9 MeV·cm²/mg. These characteristics make the device suitable for low Earth orbit as well as for more demanding space environments that require long-term radiation tolerance.

The RIC70115 is available immediately, along with the RIC70115EVAL1 evaluation board, providing designers with a platform to develop high-efficiency, radiation-hardened power conversion systems for aerospace and satellite applications.

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