Munich Court Rules in Favor of Infineon in Latest GaN IP Case

Infineon Technologies has secured another favorable ruling from the District Court Munich (Landgericht München I) in an ongoing patent infringement dispute with Innoscience concerning gallium nitride (GaN) technology. The court determined that Innoscience infringed Infineon’s intellectual property and issued an injunction prohibiting the import, sale, and marketing of the affected products in Germany, as well as an order for damages.

This decision represents another development in a series of legal cases between the two companies, in which courts in both Germany and the United States have consistently found that certain Innoscience products violate Infineon’s GaN-related patents. The ruling follows earlier decisions issued in June 2026 and August 2025 in Germany, as well as a determination by the U.S. International Trade Commission (ITC) on May 7, which also found infringement in related cases involving GaN technology. Additional proceedings involving other patents remain ongoing in the United States.

The disputed technology relates to GaN, a wide-bandgap semiconductor material widely used in high-efficiency power electronics. GaN devices are increasingly deployed in applications such as renewable energy systems, electric vehicles, industrial automation, and high-performance data center power supplies due to their ability to operate at higher voltages and switching frequencies with improved efficiency compared to conventional silicon-based devices.

Infineon emphasized that GaN technology is a key strategic area for the company, supporting its broader portfolio of power semiconductors and enabling energy-efficient system designs across multiple industries. The company continues to position itself as a leading integrated device manufacturer (IDM) in the GaN market, supported by an extensive intellectual property portfolio comprising approximately 450 GaN patent families.

According to Infineon, the continued enforcement of its patent rights underscores its commitment to protecting innovation in semiconductor technologies critical to global decarbonization and digital transformation. The company stated that it remains focused on advancing GaN development while maintaining its leadership position in high-efficiency power conversion technologies used in next-generation electronic systems.

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