ZVN4206AVSTZ
MOSFET N-CH 60V 600MA E-LINE
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Transistors Fets Mosfets Single
E-Line-3
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Diodes Incorporated |
| Model | ZVN4206AVSTZ |
| Package / Case | E-Line-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Rds On (Max) | 1Ohm @ 1.5A, 10V |
| Vgs(th) (Max) | 3V @ 1mA |
| Input Capacitance (Ciss) | 100 pF @ 25 V |
| Power Dissipation (Max) | 700mW (Ta) |
| Drive Voltage | 5V, 10V |
| Supplier Device Package | E-Line (TO-92 compatible) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
ZVN4206AVSTZ by Diodes Incorporated is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The E-Line-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1Ohm @ 1.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for ZVN4206AVSTZ
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 1.5A, 10V |
| Power Dissipation (Max) | 700mW (Ta) |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 100 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 600mA (Ta) |
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