ZVN2110ASTZ
MOSFET N-CH 100V 320MA E-LINE
,TO-226_straightlead.jpg)
Transistors Fets Mosfets Single
E-Line-3
Active
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Diodes Incorporated |
| Model | ZVN2110ASTZ |
| Package / Case | E-Line-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 100 V |
| Rds On (Max) | 4Ohm @ 1A, 10V |
| Vgs(th) (Max) | 2.4V @ 1mA |
| Input Capacitance (Ciss) | 75 pF @ 25 V |
| Power Dissipation (Max) | 700mW (Ta) |
| Drive Voltage | 10V |
| Supplier Device Package | E-Line (TO-92 compatible) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
ZVN2110ASTZ by Diodes Incorporated is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The E-Line-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 4Ohm @ 1A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for ZVN2110ASTZ
Alternatives & Replacements
View All →PMPB27EP,115
30 V, SINGLE P-CHANNEL TRENCH MO
PMXB65UPE147
P-CHANNEL MOSFET
NXS7002AK215
SMALL SIGNAL FET
BSP318SL6327HTSA1
MOSFET N-CH 60V 2.6A SOT223-4
UPA2351T1G(2)-E4-A
POWER FIELD-EFFECT TRANSISTOR
RJK0397DPA-0G#J7A
POWER TRANSISTOR, MOSFET
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.4V @ 1mA |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 1A, 10V |
| Power Dissipation (Max) | 700mW (Ta) |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 75 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 320mA (Ta) |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.