UPA2630T1R-E2-AX
MOSFET P-CH 12V 7A 6HUSON
Transistors Fets Mosfets Single
6-WFDFN Exposed Pad
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Renesas Electronics America Inc |
| Model | UPA2630T1R-E2-AX |
| Package / Case | 6-WFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 12 V |
| Rds On (Max) | 59mOhm @ 3.5A, 1.8V |
| Gate Charge (Qg) | 11.3 nC @ 4.5 V |
| Input Capacitance (Ciss) | 1260 pF @ 10 V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Drive Voltage | 1.8V, 4.5V |
| Supplier Device Package | 6-HUSON (2x2) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
UPA2630T1R-E2-AX by Renesas Electronics America Inc is an N-channel power MOSFET rated at 12 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-WFDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 59mOhm @ 3.5A, 1.8V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for UPA2630T1R-E2-AX
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 3.5A, 1.8V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 11.3 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 12 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1260 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
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