UPA1919TE-T1-AT
MOSFET P-CH 20V SC-95
Transistors Fets Mosfets Single
SC-95-6
Last Time Buy
Price available on request
MOQ: 3000 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Renesas Electronics America Inc |
| Model | UPA1919TE-T1-AT |
| Package / Case | SC-95-6 |
| Mounting Type | Surface Mount |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 58mOhm @ 3A, 4.5V |
| Vgs(th) (Max) | 1.5V @ 1mA |
| Gate Charge (Qg) | 6 nC @ 4 V |
| Input Capacitance (Ciss) | 680 pF @ 10 V |
| Supplier Device Package | SC-95-6, Mini Mold Thin |
| RoHS | RoHS |
| Part Status | Last Time Buy |
Application & Notes
UPA1919TE-T1-AT by Renesas Electronics America Inc is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SC-95-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 58mOhm @ 3A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for UPA1919TE-T1-AT
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All Technical Specifications
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 4 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 10 V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
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