TPC8115(TE12L,Q,M)
MOSFET P-CH 20V 10A 8SOP
Transistors Fets Mosfets Single
8-SOIC (0.173", 4.40mm Width)
U-MOSIV
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | TPC8115(TE12L,Q,M) |
| Package / Case | 8-SOIC (0.173", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 10mOhm @ 5A, 4.5V |
| Vgs(th) (Max) | 1.2V @ 200µA |
| Gate Charge (Qg) | 115 nC @ 5 V |
| Input Capacitance (Ciss) | 9130 pF @ 10 V |
| Power Dissipation (Max) | 1W (Ta) |
| Drive Voltage | 1.8V, 4.5V |
| Supplier Device Package | 8-SOP (5.5x6.0) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
TPC8115(TE12L,Q,M) by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.173", 4.40mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 10mOhm @ 5A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for TPC8115(TE12L,Q,M)
Alternatives & Replacements
View All →FSS275-TL-E
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UPA2718AGR-E2-AT
MOSFET P-CH 30V 13A 8PSOP
UPA2709AGR-E1-AT
MOSFET N-CH 30V 13A 8PSOP
All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.2V @ 200µA |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 5A, 4.5V |
| Power Dissipation (Max) | 1W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 115 nC @ 5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9130 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
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