FSS275-TL-E
MOSFET N-CH 60V 6A 8SOP
Transistors Fets Mosfets Single
8-SOIC (0.173", 4.40mm Width)
Obsolete
Price available on request
MOQ: 628 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FSS275-TL-E |
| Package / Case | 8-SOIC (0.173", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Rds On (Max) | 43mOhm @ 3A, 10V |
| Gate Charge (Qg) | 21 nC @ 10 V |
| Input Capacitance (Ciss) | 1100 pF @ 20 V |
| Power Dissipation (Max) | 1.9W (Ta) |
| Supplier Device Package | 8-SOP |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
FSS275-TL-E by Rochester Electronics, LLC is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.173", 4.40mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 43mOhm @ 3A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FSS275-TL-E
Alternatives & Replacements
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UPA2720GR-E1-A
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All Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 43mOhm @ 3A, 10V |
| Power Dissipation (Max) | 1.9W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 20 V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
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