TPC8109(TE12L)
MOSFET P-CH 30V 10A 8-SOP
Transistors Fets Mosfets Single
8-SOIC (0.173", 4.40mm Width)
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | TPC8109(TE12L) |
| Package / Case | 8-SOIC (0.173", 4.40mm Width) |
| Mounting Type | Surface Mount |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 20mOhm @ 5A, 10V |
| Vgs(th) (Max) | 2V @ 1mA |
| Gate Charge (Qg) | 45 nC @ 10 V |
| Input Capacitance (Ciss) | 2260 pF @ 10 V |
| Supplier Device Package | 8-SOP (5.5x6.0) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
TPC8109(TE12L) by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.173", 4.40mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 20mOhm @ 5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for TPC8109(TE12L)
Alternatives & Replacements
View All →FSS275-TL-E
MOSFET N-CH 60V 6A 8SOP
UPA2701GR-E1-AT
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UPA2718AGR-E1-AT
MOSFET P-CH 30V 13A 8PSOP
UPA2716AGR-E1-AT
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UPA2718AGR-E2-AT
MOSFET P-CH 30V 13A 8PSOP
UPA2709AGR-E1-AT
MOSFET N-CH 30V 13A 8PSOP
All Technical Specifications
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2260 pF @ 10 V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
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