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MOQ varies by availability. Contact us with your required quantity — we support small-batch and prototype orders. Typical MOQ starts from 1 pcs.

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Standard delivery: 3–7 business days via DHL/FedEx/UPS. We ship from Shenzhen, China to worldwide destinations. Express and economy options available.

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Yes. All components are sourced from authorized distributors and verified suppliers. Each batch is inspected before shipping. We guarantee 100% authentic, brand-new parts.

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Yes, the datasheet is available. Visit the product page and click the datasheet link, or contact us and we will send it to you directly.

Do you offer samples or prototype quantities for TK65G10N1,RQ?

Yes, we support sample and prototype orders. Tell us your project requirements (quantity, timeline, target price) and we will prepare a tailored quote — usually within 24 hours.

Toshiba Semiconductor and StorageTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

TK65G10N1,RQ

Name: TK65G10N1,RQ
Brand: Toshiba Semiconductor and Storage
SKU: TK65G10N1,RQ

MOSFET N-CH 100V 65A D2PAK

TK65G10N1,RQ by Toshiba Semiconductor and Storage

Parameters

Parameter	Value
Brand	Toshiba Semiconductor and Storage
Model	TK65G10N1,RQ
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type	Surface Mount
Operating Temperature	150°C (TJ)
FET Type	N-Channel
Drain to Source Voltage (Vdss)	100 V
Rds On (Max)	4.5mOhm @ 32.5A, 10V
Vgs(th) (Max)	4V @ 1mA
Gate Charge (Qg)	81 nC @ 10 V
Input Capacitance (Ciss)	5400 pF @ 50 V
Power Dissipation (Max)	156W (Tc)
Drive Voltage	10V
Supplier Device Package	D2PAK
RoHS	RoHS
Part Status	Last Time Buy

Application & Notes

TK65G10N1,RQ by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 4.5mOhm @ 32.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4V @ 1mA
Rds On (Max) @ Id, Vgs	4.5mOhm @ 32.5A, 10V
Power Dissipation (Max)	156W (Tc)
Gate Charge (Qg) (Max) @ Vgs	81 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	5400 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	65A (Ta)

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