What is the minimum order quantity for TK20G60W,RVQ?

MOQ varies by availability. Contact us with your required quantity — we support small-batch and prototype orders. Typical MOQ starts from 1000 pcs.

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Standard delivery: 3–7 business days via DHL/FedEx/UPS. We ship from Shenzhen, China to worldwide destinations. Express and economy options available.

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Yes. All components are sourced from authorized distributors and verified suppliers. Each batch is inspected before shipping. We guarantee 100% authentic, brand-new parts.

Can I get a datasheet for TK20G60W,RVQ?

Yes, the datasheet is available. Visit the product page and click the datasheet link, or contact us and we will send it to you directly.

Do you offer samples or prototype quantities for TK20G60W,RVQ?

Yes, we support sample and prototype orders. Tell us your project requirements (quantity, timeline, target price) and we will prepare a tailored quote — usually within 24 hours.

Toshiba Semiconductor and StorageTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

TK20G60W,RVQ

Name: TK20G60W,RVQ
Brand: Toshiba Semiconductor and Storage
SKU: TK20G60W,RVQ

MOSFET N CH 600V 20A D2PAK

TK20G60W,RVQ by Toshiba Semiconductor and Storage

Parameters

Parameter	Value
Brand	Toshiba Semiconductor and Storage
Model	TK20G60W,RVQ
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type	Surface Mount
Operating Temperature	150°C (TJ)
FET Type	N-Channel
Drain to Source Voltage (Vdss)	600 V
Rds On (Max)	155mOhm @ 10A, 10V
Vgs(th) (Max)	3.7V @ 1mA
Gate Charge (Qg)	48 nC @ 10 V
Input Capacitance (Ciss)	1680 pF @ 300 V
Power Dissipation (Max)	165W (Tc)
Drive Voltage	10V
Supplier Device Package	D2PAK
RoHS	RoHS
Part Status	Active

Application & Notes

TK20G60W,RVQ by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 600 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 155mOhm @ 10A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	Super Junction
Vgs(th) (Max) @ Id	3.7V @ 1mA
Rds On (Max) @ Id, Vgs	155mOhm @ 10A, 10V
Power Dissipation (Max)	165W (Tc)
Gate Charge (Qg) (Max) @ Vgs	48 nC @ 10 V
Drain to Source Voltage (Vdss)	600 V
Input Capacitance (Ciss) (Max) @ Vds	1680 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	20A (Ta)

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