TJ200F04M3L,LXHQ
MOSFET P-CH 40V 200A TO220SM
Transistors Fets Mosfets Single
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
U-MOSVI
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | TJ200F04M3L,LXHQ |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 40 V |
| Rds On (Max) | 1.8mOhm @ 100A, 10V |
| Vgs(th) (Max) | 3V @ 1mA |
| Gate Charge (Qg) | 460 nC @ 10 V |
| Input Capacitance (Ciss) | 1280 pF @ 10 V |
| Power Dissipation (Max) | 375W (Tc) |
| Drive Voltage | 6V, 10V |
| Supplier Device Package | TO-220SM(W) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
TJ200F04M3L,LXHQ by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 40 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.8mOhm @ 100A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for TJ200F04M3L,LXHQ
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | +10V, -20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 100A, 10V |
| Power Dissipation (Max) | 375W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 460 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 40 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1280 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 200A (Ta) |
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