SUM110N05-06L-E3
MOSFET N-CH 55V 110A D2PAK
Transistors Fets Mosfets Single
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SUM110N05-06L-E3 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 55 V |
| Rds On (Max) | 6mOhm @ 30A, 10V |
| Vgs(th) (Max) | 3V @ 250µA |
| Gate Charge (Qg) | 100 nC @ 10 V |
| Input Capacitance (Ciss) | 3300 pF @ 25 V |
| Supplier Device Package | TO-263 (D²Pak) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
SUM110N05-06L-E3 by Vishay Siliconix is an N-channel power MOSFET rated at 55 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 6mOhm @ 30A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SUM110N05-06L-E3
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All Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 30A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 55 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3300 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
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