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STMicroelectronicsTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

STH175N4F6-6AG

MOSFET N-CH 40V 120A H2PAK-2

STH175N4F6-6AG by STMicroelectronics
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Series

Automotive, AEC-Q101, STripFET™ F6

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandSTMicroelectronics
ModelSTH175N4F6-6AG
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)40 V
Rds On (Max)2.4mOhm @ 60A, 10V
Vgs(th) (Max)4.5V @ 250µA
Gate Charge (Qg)130 nC @ 10 V
Input Capacitance (Ciss)7735 pF @ 20 V
Power Dissipation (Max)150W (Tc)
Drive Voltage10V
Supplier Device PackageH2Pak-2
RoHSRoHS
Part StatusObsolete

Application & Notes

STH175N4F6-6AG by STMicroelectronics is an N-channel power MOSFET rated at 40 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 2.4mOhm @ 60A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4.5V @ 250µA
Rds On (Max) @ Id, Vgs2.4mOhm @ 60A, 10V
Power Dissipation (Max)150W (Tc)
Gate Charge (Qg) (Max) @ Vgs130 nC @ 10 V
Drain to Source Voltage (Vdss)40 V
Input Capacitance (Ciss) (Max) @ Vds7735 pF @ 20 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C120A (Tc)

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