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STMicroelectronicsTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

STB40NF10LT4

MOSFET N-CH 100V 40A D2PAK

STB40NF10LT4 by STMicroelectronics
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Series

STripFET™ II

Status

Active

Datasheet

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Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandSTMicroelectronics
ModelSTB40NF10LT4
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-65°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)100 V
Rds On (Max)33mOhm @ 20A, 10V
Vgs(th) (Max)2.5V @ 250µA
Gate Charge (Qg)64 nC @ 4.5 V
Input Capacitance (Ciss)2300 pF @ 25 V
Power Dissipation (Max)150W (Tc)
Drive Voltage5V, 10V
Supplier Device PackageD2PAK
RoHSRoHS
Part StatusActive

Application & Notes

STB40NF10LT4 by STMicroelectronics is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 33mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for STB40NF10LT4

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Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±15V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA
Rds On (Max) @ Id, Vgs33mOhm @ 20A, 10V
Power Dissipation (Max)150W (Tc)
Gate Charge (Qg) (Max) @ Vgs64 nC @ 4.5 V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds2300 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Current - Continuous Drain (Id) @ 25°C40A (Tc)

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