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STMicroelectronicsTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

STB40N20

MOSFET N-CH 200V 40A D2PAK

STB40N20 by STMicroelectronics
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Series

STripFET™

Status

Obsolete

Datasheet

View Datasheet ↗

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandSTMicroelectronics
ModelSTB40N20
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)200 V
Rds On (Max)45mOhm @ 20A, 10V
Vgs(th) (Max)4V @ 250µA
Gate Charge (Qg)75 nC @ 10 V
Input Capacitance (Ciss)2500 pF @ 25 V
Power Dissipation (Max)160W (Tc)
Drive Voltage10V
Supplier Device PackageD2PAK
RoHSRoHS
Part StatusObsolete

Application & Notes

STB40N20 by STMicroelectronics is an N-channel power MOSFET rated at 200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 45mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for STB40N20

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Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA
Rds On (Max) @ Id, Vgs45mOhm @ 20A, 10V
Power Dissipation (Max)160W (Tc)
Gate Charge (Qg) (Max) @ Vgs75 nC @ 10 V
Drain to Source Voltage (Vdss)200 V
Input Capacitance (Ciss) (Max) @ Vds2500 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C40A (Tc)

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