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MOQ varies by availability. Contact us with your required quantity — we support small-batch and prototype orders. Typical MOQ starts from 1 pcs.

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Standard delivery: 3–7 business days via DHL/FedEx/UPS. We ship from Shenzhen, China to worldwide destinations. Express and economy options available.

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STMicroelectronicsTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

STB12NM50FDT4

Name: STB12NM50FDT4
Brand: STMicroelectronics
SKU: STB12NM50FDT4

MOSFET N-CH 500V 12A D2PAK

Parameters

Parameter	Value
Brand	STMicroelectronics
Model	STB12NM50FDT4
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type	Surface Mount
Operating Temperature	-65°C ~ 150°C (TJ)
FET Type	N-Channel
Drain to Source Voltage (Vdss)	500 V
Rds On (Max)	400mOhm @ 6A, 10V
Vgs(th) (Max)	5V @ 250µA
Gate Charge (Qg)	12 nC @ 10 V
Input Capacitance (Ciss)	1000 pF @ 25 V
Power Dissipation (Max)	160W (Tc)
Drive Voltage	10V
Supplier Device Package	D2PAK
RoHS	RoHS
Part Status	Obsolete

Application & Notes

STB12NM50FDT4 by STMicroelectronics is an N-channel power MOSFET rated at 500 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 400mOhm @ 6A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	5V @ 250µA
Rds On (Max) @ Id, Vgs	400mOhm @ 6A, 10V
Power Dissipation (Max)	160W (Tc)
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
Drain to Source Voltage (Vdss)	500 V
Input Capacitance (Ciss) (Max) @ Vds	1000 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)

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