SSM10N954L,EFF
COMMON-DRAIN NCH MOSFET, 12V, 13
Transistors Fets Mosfets Single
10-SMD, No Lead
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | SSM10N954L,EFF |
| Package / Case | 10-SMD, No Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 12 V |
| Rds On (Max) | 2.75mOhm @ 6A, 4.5V |
| Vgs(th) (Max) | 1.4V @ 1.11mA |
| Gate Charge (Qg) | 25 nC @ 4 V |
| Power Dissipation (Max) | 800mW (Ta) |
| Drive Voltage | 2.5V, 4.5V |
| Supplier Device Package | TCSPAC-153001 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SSM10N954L,EFF by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 12 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 10-SMD, No Lead package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 2.75mOhm @ 6A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SSM10N954L,EFF
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.4V @ 1.11mA |
| Rds On (Max) @ Id, Vgs | 2.75mOhm @ 6A, 4.5V |
| Power Dissipation (Max) | 800mW (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 4 V |
| Drain to Source Voltage (Vdss) | 12 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 13.5A (Ta) |
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