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Vishay Siliconix28-SOIC (0.295", 7.50mm Width)RoHS

SQV120N10-3M8_GE3

MOSFET N-CH 100V 120A TO262-3

SQV120N10-3M8_GE3 by Vishay Siliconix
Subcategory

Transistors Fets Mosfets Single

Package

28-SOIC (0.295", 7.50mm Width)

Series

Automotive, AEC-Q101, TrenchFET®

Status

Last Time Buy

Price available on request

MOQ: 500 pcs

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Parameters

ParameterValue
BrandVishay Siliconix
ModelSQV120N10-3M8_GE3
Package / Case28-SOIC (0.295", 7.50mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)100 V
Rds On (Max)3.8mOhm @ 20A, 10V
Vgs(th) (Max)3.5V @ 250µA
Gate Charge (Qg)190 nC @ 10 V
Input Capacitance (Ciss)7230 pF @ 25 V
Power Dissipation (Max)250W (Tc)
Drive Voltage10V
Supplier Device Package28-SOIC
RoHSRoHS
Part StatusLast Time Buy

Application & Notes

SQV120N10-3M8_GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 28-SOIC (0.295", 7.50mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3.8mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3.5V @ 250µA
Rds On (Max) @ Id, Vgs3.8mOhm @ 20A, 10V
Power Dissipation (Max)250W (Tc)
Gate Charge (Qg) (Max) @ Vgs190 nC @ 10 V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds7230 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C120A (Tc)

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