SIZ998BDT-T1-GE3
DUAL N-CHANNEL 30-V (D-S) MOSFET
Transistors Fets Mosfets Arrays
8-PowerWDFN
TrenchFET® Gen IV
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SIZ998BDT-T1-GE3 |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual), Schottky |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V |
| Vgs(th) (Max) | 2.2V @ 250µA |
| Gate Charge (Qg) | 18nC @ 10V, 46.7nC @ 10V |
| Input Capacitance (Ciss) | 790pF @ 15V, 2130pF @ 15V |
| Power Dissipation (Max) | 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc) |
| Supplier Device Package | 8-PowerPair® (6x5) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SIZ998BDT-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerWDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SIZ998BDT-T1-GE3
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All Technical Specifications
| FET Type | 2 N-Channel (Dual), Schottky |
| FET Feature | Standard |
| Power - Max | 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Rds On (Max) @ Id, Vgs | 4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V, 46.7nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 790pF @ 15V, 2130pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc) |
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