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Vishay Siliconix8-PowerWDFNRoHS

SIZ988DT-T1-GE3

MOSFET 2 N-CH 30V 8-POWERPAIR

SIZ988DT-T1-GE3 by Vishay Siliconix
Subcategory

Transistors Fets Mosfets Arrays

Package

8-PowerWDFN

Series

TrenchFET®

Status

Active

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandVishay Siliconix
ModelSIZ988DT-T1-GE3
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET Type2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Rds On (Max)7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V
Vgs(th) (Max)2.4V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg)10.5nC @ 4.5V, 23.1nC @ 4.5V
Input Capacitance (Ciss)1000pF @ 15V, 2425pF @ 15V
Power Dissipation (Max)20.2W, 40W
Supplier Device Package8-PowerPair®
RoHSRoHS
Part StatusActive

Application & Notes

SIZ988DT-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerWDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET Type2 N-Channel (Dual)
FET FeatureStandard
Power - Max20.2W, 40W
Vgs(th) (Max) @ Id2.4V @ 250µA, 2.2V @ 250µA
Rds On (Max) @ Id, Vgs7.5mOhm @ 10A, 10V, 4.1mOhm @ 19A, 10V
Gate Charge (Qg) (Max) @ Vgs10.5nC @ 4.5V, 23.1nC @ 4.5V
Drain to Source Voltage (Vdss)30V
Input Capacitance (Ciss) (Max) @ Vds1000pF @ 15V, 2425pF @ 15V
Current - Continuous Drain (Id) @ 25°C40A (Tc), 60A (Tc)

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