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Vishay SiliconixPowerPAK® SO-8RoHS

SIJ188DP-T1-GE3

MOSFET N-CH 60V 25.5A/92.4A PPAK

SIJ188DP-T1-GE3 by Vishay Siliconix
Subcategory

Transistors Fets Mosfets Single

Package

PowerPAK® SO-8

Series

TrenchFET® Gen IV

Status

Active

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandVishay Siliconix
ModelSIJ188DP-T1-GE3
Package / CasePowerPAK® SO-8
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)60 V
Rds On (Max)3.85mOhm @ 10A, 10V
Vgs(th) (Max)3.6V @ 250µA
Gate Charge (Qg)44 nC @ 10 V
Input Capacitance (Ciss)1920 pF @ 30 V
Power Dissipation (Max)5W (Ta), 65.7W (Tc)
Drive Voltage7.5V, 10V
Supplier Device PackagePowerPAK® SO-8
RoHSRoHS
Part StatusActive

Application & Notes

SIJ188DP-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The PowerPAK® SO-8 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3.85mOhm @ 10A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3.6V @ 250µA
Rds On (Max) @ Id, Vgs3.85mOhm @ 10A, 10V
Power Dissipation (Max)5W (Ta), 65.7W (Tc)
Gate Charge (Qg) (Max) @ Vgs44 nC @ 10 V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds1920 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Current - Continuous Drain (Id) @ 25°C25.5A (Ta), 92.4A (Tc)

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