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Vishay Siliconix8-PowerBSFNRoHS

SIHK075N60E-T1-GE3

E SERIES POWER MOSFET POWERPAK 1

SIHK075N60E-T1-GE3 by Vishay Siliconix
Subcategory

Transistors Fets Mosfets Single

Package

8-PowerBSFN

Series

E

Status

Active

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandVishay Siliconix
ModelSIHK075N60E-T1-GE3
Package / Case8-PowerBSFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)600 V
Rds On (Max)80mOhm @ 13A, 10V
Vgs(th) (Max)5V @ 250µA
Gate Charge (Qg)62 nC @ 10 V
Input Capacitance (Ciss)2582 pF @ 100 V
Power Dissipation (Max)167W (Tc)
Drive Voltage10V
Supplier Device PackagePowerPAK®10 x 12
RoHSRoHS
Part StatusActive

Application & Notes

SIHK075N60E-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 600 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerBSFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 80mOhm @ 13A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5V @ 250µA
Rds On (Max) @ Id, Vgs80mOhm @ 13A, 10V
Power Dissipation (Max)167W (Tc)
Gate Charge (Qg) (Max) @ Vgs62 nC @ 10 V
Drain to Source Voltage (Vdss)600 V
Input Capacitance (Ciss) (Max) @ Vds2582 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C29A (Tc)

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