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Vishay SiliconixTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

SIHB5N80AE-GE3

E SERIES POWER MOSFET D2PAK (TO-

SIHB5N80AE-GE3 by Vishay Siliconix
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Series

E

Status

Active

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandVishay Siliconix
ModelSIHB5N80AE-GE3
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)800 V
Rds On (Max)1.35Ohm @ 1.5A, 10V
Vgs(th) (Max)4V @ 250µA
Gate Charge (Qg)16.5 nC @ 10 V
Input Capacitance (Ciss)321 pF @ 100 V
Power Dissipation (Max)62.5W (Tc)
Drive Voltage10V
Supplier Device PackageD²PAK (TO-263)
RoHSRoHS
Part StatusActive

Application & Notes

SIHB5N80AE-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 800 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.35Ohm @ 1.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for SIHB5N80AE-GE3

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MOSFET Alternatives: IRFZ44N, AO3400, IRF4905 & More — Cross Reference Guide

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Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA
Rds On (Max) @ Id, Vgs1.35Ohm @ 1.5A, 10V
Power Dissipation (Max)62.5W (Tc)
Gate Charge (Qg) (Max) @ Vgs16.5 nC @ 10 V
Drain to Source Voltage (Vdss)800 V
Input Capacitance (Ciss) (Max) @ Vds321 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C4.4A (Tc)

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