Vishay Siliconix10-PolarPAK® (L)RoHS
SIE876DF-T1-GE3
MOSFET N-CH 60V 60A 10POLARPAK
Category
Subcategory
Transistors Fets Mosfets Single
Package
10-PolarPAK® (L)
Series
TrenchFET®
Status
Obsolete
Datasheet
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SIE876DF-T1-GE3 |
| Package / Case | 10-PolarPAK® (L) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Rds On (Max) | 6.1mOhm @ 20A, 10V |
| Vgs(th) (Max) | 4.4V @ 250µA |
| Gate Charge (Qg) | 77 nC @ 10 V |
| Input Capacitance (Ciss) | 3100 pF @ 30 V |
| Power Dissipation (Max) | 5.2W (Ta), 125W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | 10-PolarPAK® (L) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
SIE876DF-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 10-PolarPAK® (L) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 6.1mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SIE876DF-T1-GE3
Alternatives & Replacements
View All →All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4.4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 6.1mOhm @ 20A, 10V |
| Power Dissipation (Max) | 5.2W (Ta), 125W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 77 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
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