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Vishay Siliconix10-PolarPAK® (L)RoHS

SIE818DF-T1-E3

MOSFET N-CH 75V 60A 10POLARPAK

SIE818DF-T1-E3 by Vishay Siliconix
Subcategory

Transistors Fets Mosfets Single

Package

10-PolarPAK® (L)

Series

TrenchFET®

Status

Active

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandVishay Siliconix
ModelSIE818DF-T1-E3
Package / Case10-PolarPAK® (L)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)75 V
Rds On (Max)9.5mOhm @ 16A, 10V
Vgs(th) (Max)3V @ 250µA
Gate Charge (Qg)95 nC @ 10 V
Input Capacitance (Ciss)3200 pF @ 38 V
Power Dissipation (Max)5.2W (Ta), 125W (Tc)
Drive Voltage4.5V, 10V
Supplier Device Package10-PolarPAK® (L)
RoHSRoHS
Part StatusActive

Application & Notes

SIE818DF-T1-E3 by Vishay Siliconix is an N-channel power MOSFET rated at 75 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 10-PolarPAK® (L) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 9.5mOhm @ 16A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA
Rds On (Max) @ Id, Vgs9.5mOhm @ 16A, 10V
Power Dissipation (Max)5.2W (Ta), 125W (Tc)
Gate Charge (Qg) (Max) @ Vgs95 nC @ 10 V
Drain to Source Voltage (Vdss)75 V
Input Capacitance (Ciss) (Max) @ Vds3200 pF @ 38 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C60A (Tc)

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