SIE836DF-T1-E3
MOSFET N-CH 200V 18.3A 10POLARPK
Transistors Fets Mosfets Single
10-PolarPAK® (SH)
TrenchFET®
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SIE836DF-T1-E3 |
| Package / Case | 10-PolarPAK® (SH) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 200 V |
| Rds On (Max) | 130mOhm @ 4.1A, 10V |
| Vgs(th) (Max) | 4.5V @ 250µA |
| Gate Charge (Qg) | 41 nC @ 10 V |
| Input Capacitance (Ciss) | 1200 pF @ 100 V |
| Power Dissipation (Max) | 5.2W (Ta), 104W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | 10-PolarPAK® (SH) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
SIE836DF-T1-E3 by Vishay Siliconix is an N-channel power MOSFET rated at 200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 10-PolarPAK® (SH) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 130mOhm @ 4.1A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SIE836DF-T1-E3
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 4.1A, 10V |
| Power Dissipation (Max) | 5.2W (Ta), 104W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 18.3A (Tc) |
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