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Vishay Siliconix10-PolarPAK® (S)RoHS

SIE820DF-T1-GE3

MOSFET N-CH 20V 50A 10POLARPAK

SIE820DF-T1-GE3 by Vishay Siliconix
Subcategory

Transistors Fets Mosfets Single

Package

10-PolarPAK® (S)

Series

TrenchFET®

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandVishay Siliconix
ModelSIE820DF-T1-GE3
Package / Case10-PolarPAK® (S)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)3.5mOhm @ 18A, 4.5V
Vgs(th) (Max)2V @ 250µA
Gate Charge (Qg)143 nC @ 10 V
Input Capacitance (Ciss)4300 pF @ 10 V
Power Dissipation (Max)5.2W (Ta), 104W (Tc)
Drive Voltage2.5V, 4.5V
Supplier Device Package10-PolarPAK® (S)
RoHSRoHS
Part StatusObsolete

Application & Notes

SIE820DF-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 10-PolarPAK® (S) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3.5mOhm @ 18A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±12V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 250µA
Rds On (Max) @ Id, Vgs3.5mOhm @ 18A, 4.5V
Power Dissipation (Max)5.2W (Ta), 104W (Tc)
Gate Charge (Qg) (Max) @ Vgs143 nC @ 10 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds4300 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C50A (Tc)

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