PartsCube Global

Vishay SiliconixPowerPAK® SC-75-6RoHS

SIB406EDK-T1-GE3

MOSFET N-CH 20V 6A PPAK SC75-6

SIB406EDK-T1-GE3 by Vishay Siliconix
Subcategory

Transistors Fets Mosfets Single

Package

PowerPAK® SC-75-6

Series

TrenchFET®

Status

Active

Price available on request

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

✅ 365-Day Warranty🚚 Global Shipping

Parameters

ParameterValue
BrandVishay Siliconix
ModelSIB406EDK-T1-GE3
Package / CasePowerPAK® SC-75-6
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)46mOhm @ 3.9A, 4.5V
Vgs(th) (Max)1.4V @ 250µA
Gate Charge (Qg)12 nC @ 10 V
Input Capacitance (Ciss)350 pF @ 10 V
Power Dissipation (Max)1.95W (Ta), 10W (Tc)
Drive Voltage2.5V, 4.5V
Supplier Device PackagePowerPAK® SC-75-6
RoHSRoHS
Part StatusActive

Application & Notes

SIB406EDK-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The PowerPAK® SC-75-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 46mOhm @ 3.9A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±12V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.4V @ 250µA
Rds On (Max) @ Id, Vgs46mOhm @ 3.9A, 4.5V
Power Dissipation (Max)1.95W (Ta), 10W (Tc)
Gate Charge (Qg) (Max) @ Vgs12 nC @ 10 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds350 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C6A (Tc)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.