SI8425DB-T1-E1
MOSFET P-CH 20V 4WLCSP
Transistors Fets Mosfets Single
4-UFBGA, WLCSP
TrenchFET®
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SI8425DB-T1-E1 |
| Package / Case | 4-UFBGA, WLCSP |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 23mOhm @ 2A, 4.5V |
| Vgs(th) (Max) | 900mV @ 250µA |
| Gate Charge (Qg) | 110 nC @ 10 V |
| Input Capacitance (Ciss) | 2800 pF @ 10 V |
| Power Dissipation (Max) | 1.1W (Ta), 2.7W (Tc) |
| Drive Voltage | 1.8V, 4.5V |
| Supplier Device Package | 4-WLCSP (1.6x1.6) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SI8425DB-T1-E1 by Vishay Siliconix is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 4-UFBGA, WLCSP package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 23mOhm @ 2A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SI8425DB-T1-E1
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±10V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 2A, 4.5V |
| Power Dissipation (Max) | 1.1W (Ta), 2.7W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 5.9A (Ta) |
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