SI8402DB-T1-E1
MOSFET N-CH 20V 5.3A 2X2 4-MFP
Transistors Fets Mosfets Single
4-XFBGA, CSPBGA
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SI8402DB-T1-E1 |
| Package / Case | 4-XFBGA, CSPBGA |
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 37mOhm @ 1A, 4.5V |
| Vgs(th) (Max) | 1V @ 250µA |
| Gate Charge (Qg) | 26 nC @ 4.5 V |
| Supplier Device Package | 4-Microfoot |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
SI8402DB-T1-E1 by Vishay Siliconix is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 4-XFBGA, CSPBGA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 37mOhm @ 1A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SI8402DB-T1-E1
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All Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Rds On (Max) @ Id, Vgs | 37mOhm @ 1A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 5.3A (Ta) |
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