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Vishay SiliconixPowerPAK® SO-8RoHS

SI7882DP-T1-GE3

MOSFET N-CH 12V 13A PPAK SO-8

SI7882DP-T1-GE3 by Vishay Siliconix
Subcategory

Transistors Fets Mosfets Single

Package

PowerPAK® SO-8

Series

TrenchFET®

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandVishay Siliconix
ModelSI7882DP-T1-GE3
Package / CasePowerPAK® SO-8
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)12 V
Rds On (Max)5.5mOhm @ 17A, 4.5V
Vgs(th) (Max)1.4V @ 250µA
Gate Charge (Qg)30 nC @ 4.5 V
Power Dissipation (Max)1.9W (Ta)
Drive Voltage2.5V, 4.5V
Supplier Device PackagePowerPAK® SO-8
RoHSRoHS
Part StatusObsolete

Application & Notes

SI7882DP-T1-GE3 by Vishay Siliconix is an N-channel power MOSFET rated at 12 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The PowerPAK® SO-8 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 5.5mOhm @ 17A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±8V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.4V @ 250µA
Rds On (Max) @ Id, Vgs5.5mOhm @ 17A, 4.5V
Power Dissipation (Max)1.9W (Ta)
Gate Charge (Qg) (Max) @ Vgs30 nC @ 4.5 V
Drain to Source Voltage (Vdss)12 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C13A (Ta)

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