SI1499DH-T1-BE3
MOSFET P-CH 8V 1.6A/1.6A SC70-6
Transistors Fets Mosfets Single
6-TSSOP, SC-88, SOT-363
TrenchFET®
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay Siliconix |
| Model | SI1499DH-T1-BE3 |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 8 V |
| Rds On (Max) | 78mOhm @ 2A, 4.5V |
| Vgs(th) (Max) | 800mV @ 250µA |
| Gate Charge (Qg) | 16 nC @ 4.5 V |
| Input Capacitance (Ciss) | 650 pF @ 4 V |
| Power Dissipation (Max) | 2.5W (Ta), 2.78W (Tc) |
| Supplier Device Package | SC-70-6 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SI1499DH-T1-BE3 by Vishay Siliconix is an N-channel power MOSFET rated at 8 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-TSSOP, SC-88, SOT-363 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 78mOhm @ 2A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SI1499DH-T1-BE3
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±5V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 2A, 4.5V |
| Power Dissipation (Max) | 2.5W (Ta), 2.78W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 8 V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 4 V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta), 1.6A (Tc) |
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