PC
onsemi6-TSSOP, SC-88, SOT-363RoHS

NTJS4160NT1G

MOSFET N-CH 30V 1.8A SC88/SC70-6

NTJS4160NT1G by onsemi
Subcategory

Transistors Fets Mosfets Single

Package

6-TSSOP, SC-88, SOT-363

Status

Obsolete

$0.07 / unit (market reference)

MOQ: 4121 pcs

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Parameters

ParameterValue
Brandonsemi
ModelNTJS4160NT1G
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)60mOhm @ 2.6A, 10V
Vgs(th) (Max)2.4V @ 250µA
Gate Charge (Qg)2.75 nC @ 4.5 V
Input Capacitance (Ciss)230 pF @ 10 V
Power Dissipation (Max)300mW (Ta)
Drive Voltage4.5V, 10V
Supplier Device PackageSC-88/SC70-6/SOT-363
RoHSRoHS
Part StatusObsolete

Application & Notes

NTJS4160NT1G by onsemi is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-TSSOP, SC-88, SOT-363 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 60mOhm @ 2.6A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.4V @ 250µA
Rds On (Max) @ Id, Vgs60mOhm @ 2.6A, 10V
Power Dissipation (Max)300mW (Ta)
Gate Charge (Qg) (Max) @ Vgs2.75 nC @ 4.5 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds230 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C1.8A (Ta)

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