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Vishay Siliconix6-TSSOP, SC-88, SOT-363RoHS

SI1405DL-T1-E3

MOSFET P-CH 8V 1.6A SC70-6

SI1405DL-T1-E3 by Vishay Siliconix
Subcategory

Transistors Fets Mosfets Single

Package

6-TSSOP, SC-88, SOT-363

Series

TrenchFET®

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandVishay Siliconix
ModelSI1405DL-T1-E3
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)8 V
Rds On (Max)125mOhm @ 1.8A, 4.5V
Vgs(th) (Max)450mV @ 250µA (Min)
Gate Charge (Qg)7 nC @ 4.5 V
Power Dissipation (Max)568mW (Ta)
Drive Voltage1.8V, 4.5V
Supplier Device PackageSC-70-6
RoHSRoHS
Part StatusObsolete

Application & Notes

SI1405DL-T1-E3 by Vishay Siliconix is an N-channel power MOSFET rated at 8 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-TSSOP, SC-88, SOT-363 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 125mOhm @ 1.8A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±8V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs125mOhm @ 1.8A, 4.5V
Power Dissipation (Max)568mW (Ta)
Gate Charge (Qg) (Max) @ Vgs7 nC @ 4.5 V
Drain to Source Voltage (Vdss)8 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C1.6A (Ta)

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