RQA0011DNS#G0
MOSFET N-CH 16V 3.8A 2HWSON
Transistors Fets Mosfets Single
3-DFN Exposed Pad
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Renesas Electronics America Inc |
| Model | RQA0011DNS#G0 |
| Package / Case | 3-DFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 16 V |
| Vgs(th) (Max) | 750mV @ 1mA |
| Input Capacitance (Ciss) | 102 pF @ 0 V |
| Power Dissipation (Max) | 15W (Tc) |
| Supplier Device Package | 2-HWSON (5x4) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
RQA0011DNS#G0 by Renesas Electronics America Inc is an N-channel power MOSFET rated at 16 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 3-DFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max -. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RQA0011DNS#G0
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±5V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 750mV @ 1mA |
| Power Dissipation (Max) | 15W (Tc) |
| Drain to Source Voltage (Vdss) | 16 V |
| Input Capacitance (Ciss) (Max) @ Vds | 102 pF @ 0 V |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta) |
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