Renesas Electronics America IncTO-3PFM, SC-93-3RoHS
RJP65T54DPM-E0#T2
IGBT TRENCH TO-3FP
Category
Subcategory
Transistors Igbts Single
Package
TO-3PFM, SC-93-3
Status
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Renesas Electronics America Inc |
| Model | RJP65T54DPM-E0#T2 |
| Package / Case | TO-3PFM, SC-93-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 175°C (TJ) |
| Power Dissipation (Max) | 63.5 W |
| Supplier Device Package | TO-3PF |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
RJP65T54DPM-E0#T2 by Renesas Electronics America Inc is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-3PFM, SC-93-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RJP65T54DPM-E0#T2
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All Technical Specifications
| IGBT Type | Trench |
| Input Type | Standard |
| Gate Charge | 72 nC |
| Power - Max | 63.5 W |
| Test Condition | 400V, 30A, 10Ohm, 15V |
| Switching Energy | 330µJ (on), 760µJ (off) |
| Td (on/off) @ 25°C | 35ns/120ns |
| Vce(on) (Max) @ Vge, Ic | 1.68V @ 15V, 30A |
| Current - Collector (Ic) (Max) | 60 A |
| Current - Collector Pulsed (Icm) | 225 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
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