Rohm SemiconductorTO-3PFM, SC-93-3RoHS
RGTH00TK65DGC11
IGBT
Category
Subcategory
Transistors Igbts Single
Package
TO-3PFM, SC-93-3
Status
Active
Datasheet
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rohm Semiconductor |
| Model | RGTH00TK65DGC11 |
| Package / Case | TO-3PFM, SC-93-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Power Dissipation (Max) | 72 W |
| Supplier Device Package | TO-3PFM |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
RGTH00TK65DGC11 by Rohm Semiconductor is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-3PFM, SC-93-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RGTH00TK65DGC11
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All Technical Specifications
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Gate Charge | 94 nC |
| Power - Max | 72 W |
| Test Condition | 400V, 50A, 10Ohm, 15V |
| Td (on/off) @ 25°C | 39ns/143ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 50A |
| Reverse Recovery Time (trr) | 225 ns |
| Current - Collector (Ic) (Max) | 35 A |
| Current - Collector Pulsed (Icm) | 200 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
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