RJK2006DPE-00#J3
MOSFET N-CH 200V 40A 4LDPAK
Transistors Fets Mosfets Single
SC-83
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Renesas Electronics America Inc |
| Model | RJK2006DPE-00#J3 |
| Package / Case | SC-83 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 200 V |
| Rds On (Max) | 59mOhm @ 20A, 10V |
| Gate Charge (Qg) | 43 nC @ 10 V |
| Input Capacitance (Ciss) | 1800 pF @ 25 V |
| Power Dissipation (Max) | 100W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | LDPAK |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
RJK2006DPE-00#J3 by Renesas Electronics America Inc is an N-channel power MOSFET rated at 200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SC-83 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 59mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RJK2006DPE-00#J3
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 20A, 10V |
| Power Dissipation (Max) | 100W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
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