RJK1562DJE-00#Z0
MOSFET N-CH 150V 1A TO92MOD
Transistors Fets Mosfets Single
TO-226-3, TO-92-3 Long Body (Formed Leads)
Obsolete
Price available on request
MOQ: 359 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | RJK1562DJE-00#Z0 |
| Package / Case | TO-226-3, TO-92-3 Long Body (Formed Leads) |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 150 V |
| Rds On (Max) | 1.4Ohm @ 500mA, 4V |
| Gate Charge (Qg) | 3 nC @ 4 V |
| Input Capacitance (Ciss) | 300 pF @ 25 V |
| Power Dissipation (Max) | 900mW (Ta) |
| Supplier Device Package | TO-92MOD |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
RJK1562DJE-00#Z0 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 150 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-226-3, TO-92-3 Long Body (Formed Leads) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.4Ohm @ 500mA, 4V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RJK1562DJE-00#Z0
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All Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 500mA, 4V |
| Power Dissipation (Max) | 900mW (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 4 V |
| Drain to Source Voltage (Vdss) | 150 V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
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