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Rochester Electronics, LLCSOT-1210, 8-LFPAK33 (5-Lead)RoHS

PSMN5R3-25MLDX

PSMN5R3-25MLD - N-CHANNEL 25V, L

PSMN5R3-25MLDX by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

SOT-1210, 8-LFPAK33 (5-Lead)

Status

Active

Price available on request

MOQ: 1271 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelPSMN5R3-25MLDX
Package / CaseSOT-1210, 8-LFPAK33 (5-Lead)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)25 V
Rds On (Max)5.9mOhm @ 15A, 10V
Vgs(th) (Max)2.2V @ 1mA
Gate Charge (Qg)12.7 nC @ 10 V
Input Capacitance (Ciss)858 pF @ 12 V
Power Dissipation (Max)51W (Tc)
Drive Voltage4.5V, 10V
Supplier Device PackageLFPAK33
RoHSRoHS
Part StatusActive

Application & Notes

PSMN5R3-25MLDX by Rochester Electronics, LLC is an N-channel power MOSFET rated at 25 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-1210, 8-LFPAK33 (5-Lead) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 5.9mOhm @ 15A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
FET FeatureSchottky Diode (Body)
Vgs(th) (Max) @ Id2.2V @ 1mA
Rds On (Max) @ Id, Vgs5.9mOhm @ 15A, 10V
Power Dissipation (Max)51W (Tc)
Gate Charge (Qg) (Max) @ Vgs12.7 nC @ 10 V
Drain to Source Voltage (Vdss)25 V
Input Capacitance (Ciss) (Max) @ Vds858 pF @ 12 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C70A (Tc)

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