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Nexperia USA Inc.SOT-1210, 8-LFPAK33 (5-Lead)RoHS

PSMN3R0-30MLC,115

MOSFET N-CH 30V 70A LFPAK33

PSMN3R0-30MLC,115 by Nexperia USA Inc.
Subcategory

Transistors Fets Mosfets Single

Package

SOT-1210, 8-LFPAK33 (5-Lead)

Status

Active

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandNexperia USA Inc.
ModelPSMN3R0-30MLC,115
Package / CaseSOT-1210, 8-LFPAK33 (5-Lead)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)3.15mOhm @ 25A, 10V
Vgs(th) (Max)2.15V @ 1mA
Gate Charge (Qg)34.8 nC @ 10 V
Input Capacitance (Ciss)2330 pF @ 15 V
Power Dissipation (Max)88W (Tc)
Drive Voltage4.5V, 10V
Supplier Device PackageLFPAK33
RoHSRoHS
Part StatusActive

Application & Notes

PSMN3R0-30MLC,115 by Nexperia USA Inc. is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-1210, 8-LFPAK33 (5-Lead) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3.15mOhm @ 25A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.15V @ 1mA
Rds On (Max) @ Id, Vgs3.15mOhm @ 25A, 10V
Power Dissipation (Max)88W (Tc)
Gate Charge (Qg) (Max) @ Vgs34.8 nC @ 10 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds2330 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C70A (Tc)

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